Plasma Enhanced Chemical Vapor Deposition

The PECVD technology is used for deposition of dielectric layers at low temperature. Compared to LPCVD where high temperatures of >450°C are needed, this technique can be applied to aluminum metallized wafers, because of the low process temperature of 300°C. Thick layers of up to 10 µm can be deposited using special stress neutralizing processes. PECVD processes are commonly used for metal passivation ("scratch protection"), etch mask generation, sacrificial layer deposition (surface micromachining), mechanical functional layer deposition (membranes, cantilevers). Two STS multiplex batch systems are currently in operation for PECVD.

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