LPCVD
Low Pressure Chemical Vapor Deposition
LPCVD technology is used for uniform, double side deposition of 100 and 150mm size silicon wafers with dielectric or poly-silicon layers at moderate to high process temperatures. Processing is done in three Centrotherm furnaces with 4 tubes each. All applied standard processes are SPC monitored. The layer thickness is measured on test wafers after each run.
Centrotherm furnace for up to 150mm wafers
Currently available LPCVD thin films
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LTO (low Temperature oxide), 100 up to 1200nm |
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TEOS, 100 up to 1200nm, larger thickness possible by multiple depositions and intermediate annael steps |
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Silicon Nitride (storchiometric), 50 up to 200nm, 1.1GPa tensile stress |
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Silicon-rich-Nitride (low stress nitride), 50 up to 800nm, 50 to 150 MPa tensile stress |
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Poly-Silicon undoped, 50 up to 3000nm |
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Poly-Silicon in-situ boron doped, 50 up to 3000nm, resistivity >0.015 Ohm cm |
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